cgy41 ifag imm rpd d 1 of 6 target dat asheet hirel l - and s - band gaas general purpose amplifier ? hirel discrete and microwave semiconductor ? single - stage monolithic microwave ic (mmic - amplifier ) ? application range: 100 mhz to 3 ghz ? gain: 9.5 db typ. @ 1.8 ghz ? low noise figu re: 2.7 db typ. @ 1.8 ghz ? bandwidth: 3 ghz typ. @ - 3 db, vswr < 2 : 1 * operating voltage range: 3 to 5.5 v ? input and output matched to 50 ? individual current control with neg. gate bias ? hermetically sealed ceramic package micro - x esd: e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking ordering code circuit diagram (pin configuration) package cgy41 (ql) - see below micro - x (ql) quality level: p: professional quality, ordering code: on request h: high rel quality, ordering code: on request s: space quality, ordering code: on request (see order instructions for ordering example) 1 2 3 4
cgy41 ifag imm rpd d 2 of 6 target dat asheet maximum ratings symbol value unit drain - voltage v d 5.5 v gate - voltage v g - 4 ... 0 .5 v drain - gate voltage v dg 9.5 v rf input power 1) p rf in 16 dbm channel temperature t ch 1 75 c storage temperature range t stg - 55...+175 c total power dissipation (t s < 82c) 2) p tot 440 mw thermal resistance channel - soldering point 2) r thchs 1 60 k/w notes: exceeding any of the max. ratings may cause permanent damage to the device. a ppropriate handling is required to protect the electrostatic sensitive mmic against degradation due to excess voltage or current spikes. proper ground connection of leads 2 and 4 ( with min. inductance ) is required to achieve the guaranteed rf performance , stable operating conditions and adequate cooling. 1) @ v d > 4.5 v derating required. 2) ts is measured on the source lead at the soldering point to the pcb.
cgy41 ifag imm rpd d 3 of 6 target dat asheet electrical characteristics t a = 25 c, v g = 0 v, v d = 4.5 v, r s = r l = 50 ? u nless oth erwise specified (for application circuit see next page) characteristics symbol min typ max unit drain current i d ss 40 60 80 ma power gain f = 200 mhz f = 1800 mhz g 9.5 8.5 10.5 9.5 1 3 11 db gain flatness f = 200 to 1000 mhz f = 800 to 1800 mhz g f - - 0.4 1.1 - 2 db noise figure f = 200 to 1000 mhz f = 800 to 1800 mhz f - - 2.5 2.7 - 4.0 db input return loss f = 200 to 1000 mhz f = 800 to 1800 mhz rl in - - 13 12 - 9.5 db output return loss f = 200 to 1000 mhz f = 800 to 1800 mhz rl out - - 12 12 - 9.5 db third order intercept point two tone intermodulation test f 1 = 806 mhz, f 2 = 810 mhz p 0 = 10 dbm ( both carriers ) ip3 31 32 - dbm 1db gain compression f = 200 to 1800 mhz p 1 db - 18 - dbm
cgy41 ifag imm rpd d 4 of 6 target dat asheet application circuit ( f = 800 to 1800 mhz ) legend of components c 1 , c 2 c 3 , c 4 chip capacitors 100 pf chip capacitors 1 nf l 1 for optimized input matching - discrete inductor: approx. 3nh, or - printed microstripline inductor: z approx. 100 l e approx. 5 mm l 2 , l 3 - discrete inductor: approx. 40 nh, as e.g. 5 turns 0.25 mm copper wire on nylon rod with m3 - thre ad, or - printed microstripline inductor d z diode 5.6 v ( type bzw 22 c5 v 6 ) cgy41 50 ohm microstripline input 50ohm output 50ohm 3 2 v d 1 v g 1 l c c 3 l 2 2 c c 4 4 1 d l 3
cgy41 ifag imm rpd d 5 of 6 target dat asheet total power dissipation p tot = f (t s ;t a ) 0 0 50 100 150 a s tot p t t ; [ c ] [ mw ] a t s t 100 200 300 400 500
cgy41 ifag imm rpd d 6 of 6 target dat asheet micro - x package edition 20 11 - 0 2 published by infineon technologie s ag 8 5579 neubiberg , germany ? infineon technologies ag 2011 all rights reserved. attention please! the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non - infringement of intellectual property rights of an third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon te chnologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies o ffice. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support dev ice or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reaso nable to assume that the health of the user or other persons may be endangered. 1 2 3 4
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